pnp epitaxial planar transistor description the m mbta94lt1 is designed for application features ? high breakdown voltage: vceo=400(min.) at ic=1ma ? complementary to m mbta94lt1 absolute maximum ratings ? maximum temperatures storage temperatur e ............................................................................................ -55 ~ +150 c junction temperature .................................................................................... +150 c maximum ? maximum power dissipation total power dissipation (ta=25 c) ................................................................................ 350 mw ? maximum voltages and currents (ta=25 c) vcbo collector to base voltage ...................................................................................... -400 v vceo collector to emitter voltage ................................................................................... -400 v vebo emitter to base voltage ............................................................................................. -6 v ic collector current ...................................................................................................... -15 0 ma characteristics (ta=25 c) symbol min. typ. max. unit test conditions bvcbo -400 - - v ic=-100ua, ie=0 bvceo -400 - - v ic=-1ma, ib=0 bvebo -6 - - v i e=-10ua, ic=0 icbo - - -100 na vcb=-400v, ie=0 iebo - - -100 na veb= -6v, ic=0 ices - - -500 na vce=-400v, vbe=0 *vce(sat)1 - - -200 mv ic=-1ma, ib=-0.1ma *vce(sat)2 - - -300 mv ic=-10ma, ib=-1ma *vce(sat)3 - - -600 mv ic=-50ma, ib=-5ma *vbe(sat) - - -900 mv ic=-10ma, ib=-1ma *hfe1 50 - - vce=- 10v, ic=-1ma *hfe2 75 - 200 vce=-10v , ic=-10ma *hfe3 60 - - vce=-10v , ic=-50ma *hfe4 2 0 - - vce=-10v , ic=-100ma cob - 4 6 pf vc e=-10v, f=1mhz *pulse test: pulse width 380us, duty cycle 2% that requires high voltage. sotC 23 1 base 2 emitter collector 3 we declare that the material of product compliance with rohs requirements. device marking m mbta94l t1 = 4z 2012-11 willas electronic corp. mm bta94lt1
characteristics curve capacitan ce & reverse-biased voltage 1 10 100 0.1 1 10 100 reverse-b iased voltage (v) capacit ance (pf) cob curren t gain & collector current 1 10 100 1000 1 10 100 1000 collect or current-i c (ma) hfe 25 o c 75 o c 125 o c hfe @ v ce =3v curren t gain & collector current 10 100 1000 1 10 100 1000 collect or current-i c (ma) hfe 25 o c 75 o c 125 o c hfe @ v ce =10v saturat ion voltage & collector current 10 100 1000 1 10 100 1000 co llector current-i c (ma) saturation v oltage (mv) 25 o c 75 o c 125 o c v ce(sat) @ i c =10i b satura tion voltage & collector current 100 1000 1 10 100 1000 collect or current-i c (ma) saturation v oltage (mv) 25 o c 75 o c 125 o c v be(s at) @ i c =10i b 2012-11 willas electronic corp. pnp epitaxial planar transistor mm bta94lt1
sot - 23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012-11 willas electronic corp. pnp epitaxial planar transistor mm bta94lt1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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